Temperature dependence of the optical transitions in electrodeposited Cu2O thin films

被引:80
|
作者
Mathew, X [1 ]
Mathews, NR [1 ]
Sebastian, PJ [1 ]
机构
[1] Univ Nacl Autonoma Mexico, Ctr Invest Energia, Solar Hydrogen Fuel Cell Grp, Solar Mat Dept, Temixco 62580, Morelos, Mexico
关键词
Cu2O; electrodeposition; spectral response; Schottky devices; band gap;
D O I
10.1016/S0927-0248(01)00068-X
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Cu2O films on flexible copper and molybdenum (Mo) substrates were prepared by electrodeposition form an alkaline bath. The as-deposited films were p-type and the XRD analysis revealed that the film contains only the Cu2O phase. The thickness of the films was calculated from the interference fringes in the reflection spectra. The Au/Cu2O Schottky diodes were prepared by sputtering a 15 nm thick layer of very pure gold onto the Cu2O films on Mo substrate. The probable optical transitions near the band edge were calculated from the spectral response of the device. The band gap calculated at various temperatures show a linear dependence on temperature and the absolute zero value of the band gap is deduced as 2.206 eV. The 2.493 eV direct transition observed in the room temperature shows a temperature dependence. Evidence of phonon assisted indirect transitions were observed at various temperature regions. (C) 2001 Elsevier Science BN. All rights reserved.
引用
收藏
页码:277 / 286
页数:10
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