Cost-Effective Silicon Vertical Diode Switch for Next-Generation Memory Devices

被引：9

作者：

Lee, Kong-Soo ^{[1
,2
]}

Han, Jae-Jong ^{[1
]}

Lim, Hanjin ^{[1
]}

Nam, Seokwoo ^{[1
]}

Chung, Chilhee ^{[1
]}

Jeong, Hong-Sik

Park, Hyunho ^{[2
]}

Jeong, Hanwook ^{[1
]}

Choi, Byoungdeog ^{[2
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Div, Hwasung 445701, South Korea

[2] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 02期

关键词：

Phase-change memory (PCM); SiH4; ramp-up; solid-phase epitaxy (SPE); vertical diode switch;

D O I：

10.1109/LED.2011.2175358

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a cost-effective vertical diode scheme for next-generation memory devices, including phase-change memories (PCMs), is realized. After the contact formation for diodes with only one mask layer, an amorphous silicon (a-Si) film was deposited within the contacts using SiH4 ramp-up ambient in a conventional batch-type furnace in order to minimize the growth of native oxide. A deposition/etch-back/deposition scheme enabled us to achieve robust vertical diodes without any seams or interfacial oxide layer within the vertical diode pillars. Subsequent annealing at 600 degrees C provided solid-phase epitaxial alignment of the a-Si layer. An ideality factor revealed that the new scheme provided noticeable crystallinity of the silicon diodes. Moreover, the electrical characteristics of the diodes verified that the scheme was suitable for full operation of PCM devices.

引用

页码：242 / 244

页数：3

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