Self-assembled ordered arrays of nanoscale germanium Esaki tunnel diodes

被引：4
|
作者：
Zhu, Kaigui [1 ]
Wang, Wu [1 ]
Shao, Qingyi [2 ]
Zhao, Dongning [3 ]
Lu, Yongfeng [3 ]
Ianno, Natale [3 ]
机构：
[1] Beihang Univ, Dept Phys, Beijing 100191, Peoples R China
[2] S China Normal Univ, Lab Quantum Informat Technol, Sch Phys & Telecommun Engn, Guangzhou 510006, Guangdong, Peoples R China
[3] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 17期
关键词：
NEURAL-NETWORKS; NANOELECTRONICS; ARCHITECTURE; LITHOGRAPHY; FABRICATION; SIMULATION; SURFACES; LOGIC;
D O I：
10.1063/1.3583673
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have self-assembled regimented arrays of vertical similar to 100 nm diameter Ge Esaki tunnel diodes using nanosphere lithography. Measurements of the current-voltage characteristics of individual nanodiodes using conductive atomic force microscopy at room temperature reveal pronounced negative differential resistance under forward bias, with a peak to valley ratio of 2-4. These diode arrays could constitute a neuromorphic circuit architecture exhibiting collective computational activity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3583673]
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页数：3
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