Properties of In2S3 thin films deposited onto ITO/glass substrates by chemical bath deposition

被引：36
|
作者：
Asenjo, B. [1 ]
Guillen, C. [1 ]
Chaparro, A. M. [1 ]
Saucedo, E. [2 ]
Bermudez, V. [2 ]
Lincot, D. [2 ]
Herrero, J. [1 ]
Gutierrez, M. T. [1 ]
机构：
[1] CIEMAT, Dept Energy, E-28040 Madrid, Spain
[2] Inst Res & Dev Photovolta Energy IRDEP, UMR 7174, CNRS, EDF,ENSCP, F-78401 Paris, France
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2010年 / 71卷 / 12期
关键词：
Thin films; Chemical synthesis; Raman spectroscopy; SULFIDE BUFFER LAYERS; SURFACE PHOTOVOLTAGE; SOLAR-CELLS; GROWTH; ALCVD; RAMAN;
D O I：
10.1016/j.jpcs.2010.09.011
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In2S3 films have been chemically deposited on ITO coated glass substrates by chemical bath deposition using different deposition times and precursor concentrations The bilayers are intended for photovoltaic applications Different characterization methods have been employed optical properties of the films were investigated from transmittance measurements structural properties by XRD and micro-Raman and surface morphology by SEM microscopy analysis Also the direct and indirect band-gaps and the surface gap states were studied with surface photovoltage spectroscopy (SPS) We proposed that electronic properties of the In2S3 samples are controlled by two features shallow tail states and a broad band centred at 1 5 eV approximately Their relation with the structure is discussed suggesting that their origin is related to defects created on the S sub-lattice and then both defects are intrinsic to the material (C) 2010 Elsevier Ltd All rights reserved
引用
收藏
页码：1629 / 1633
页数：5
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