Negative tone chemically amplified resist formulation optimizations for ultra high-resolution lithography

被引：5

作者：

Saint-Pol, J

Landis, S

Gourgon, C

Tedesco, S

Hanawa, R

Suetsugu, M

Akita, M

Yamamoto, S

机构：

[1] CEA, LETI, DTS, F-38054 Grenoble 9, France

[2] CEA, LETI, LTM, F-38054 Grenoble, France

[3] Sumitomo Chem Co Ltd, IT Related Chem Res Lab Photoresist Grp, Konohana Ku, Osaka 5548558, Japan

来源：

MICROELECTRONIC ENGINEERING | 2003年 / 67-8卷

关键词：

e-beam lithography; chemical amplified resist; ultra high-resolution lithography;

D O I：

10.1016/S0167-9317(03)00186-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Starting from the Sumitomo commercial platform NEB-33 resist, three new experimental negative tone chemical amplified resist (CAR) formulations have been developed, to push resolution below 40 nm in direct electron beam lithography. PEB temperatures and times have been optimized between 60 and 100 degreesC and, respectively, 20 and 120 s. Fourier transform infra red spectra have been performed and allowed us to follow the solvent and PAG concentration in order to optimize processes on all samples. As a consequence, 25-nm isolated lines have been resolved with these new chemical amplified resists. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：274 / 282

页数：9

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