Fractional quantum Hall effect at a suppressed energy gap

被引：0

作者：

Murzin, S. S. ^{[1
]}

Dorozhkin, S. I. ^{[1
]}

Tsydynzhapov, G. E. ^{[1
]}

Zverev, V. N. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Moscow 142432, Russia

来源：

JETP LETTERS | 2007年 / 86卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S0021364007140159

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In the fractional quantum Hall effect regime, the diagonal (rho(xx)) and Hall (rho(xy)) magnetoresistivity tensor components of the two-dimensional electron system (2DES) in gated GaAs/AlxGa1-x As heterojunctions are measured together with the capacitance between 2DES and the gate. The 1/3-and 2/3-fractional quantum Hall effects are observed at rather low magnetic fields where the corresponding fractional minima in the thermodynamic density of the states have already disappeared, thus, implying the suppression of the quasiparticle energy gaps.

引用

页码：139 / 143

页数：5

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