High mobility holes on hydrogen-terminated diamond surface

被引:2
|
作者
Shinagawa, H
Kido, G
Takamasu, T
Gamo, MN
Ando, T
机构
[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050003, Japan
[2] Univ Tsukuba, Ctr TARA, Tsukuba, Ibaraki 3058577, Japan
[3] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan
关键词
nano-fabrication; magnetic resonance; millimeter-wave spectroscopy;
D O I
10.1016/S0749-6036(03)00030-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Boron-doped diamond was grown by the chemical vapour deposition technique, of which the surface is atomically flat. We have measured cyclotron resonance of hydrogen-terminated boron-doped diamond and found that holes have very high mobility. Furthermore, we have successfully fabricated nano-structures on the surface with use of the scanning probe microscope. These properties suggest that diamond can be a candidate material for solid state quantum devices. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:289 / 294
页数:6
相关论文
共 50 条
  • [1] Magnetic properties of hydrogen-terminated surface layer of diamond nanoparticles
    Osipov, Vladimir
    Baidakova, Marina
    Takai, Kazuyuki
    Enoki, Toshiaki
    Vul', Alexander
    [J]. FULLERENES NANOTUBES AND CARBON NANOSTRUCTURES, 2006, 14 (2-3) : 565 - 572
  • [2] On the metastability of the surface conductivity in hydrogen-terminated polycrystalline CVD diamond
    Alvarez, J
    Kleider, JP
    Snidero, E
    Bergonzo, P
    Tromson, D
    Mer, C
    [J]. DIAMOND AND RELATED MATERIALS, 2004, 13 (4-8) : 751 - 754
  • [3] The physics of hydrogen-terminated diamond surfaces
    Ristein, J
    [J]. PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2005, 772 : 377 - 380
  • [4] Hydrogen-terminated diamond surfaces and interfaces
    Kawarada, H
    [J]. SURFACE SCIENCE REPORTS, 1996, 26 (07) : 205 - 259
  • [5] Effect of iodide ions on the hydrogen-terminated and partially oxygen-terminated diamond surface
    Kanazawa, H
    Song, KS
    Sakai, T
    Nakamura, Y
    Umezawa, H
    Tachiki, M
    Kawarada, H
    [J]. DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) : 618 - 622
  • [6] Estimation of hole mobility in hydrogen-terminated diamond MOSFET with high-k stacked gate dielectrics
    Li, Yao
    Wang, Xi
    Pu, Hongbin
    [J]. JOURNAL OF CRYSTAL GROWTH, 2023, 603
  • [7] Detection of single-mismatch DNA on hydrogen-terminated diamond surface
    Yang, J. -H.
    Kuga, S.
    Kawarada, H.
    [J]. PROCEEDINGS OF THE 5TH JOINT MEETING ON MEDICINAL CHEMISTRY, 2007, : 77 - 80
  • [8] MESFETs and MOSFETs on hydrogen-terminated diamond surfaces
    Tsugawa, K
    Hokazono, A
    Noda, H
    Kitatani, K
    Morita, K
    Kawarada, H
    [J]. SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 977 - 980
  • [9] Gas sensing properties of hydrogen-terminated diamond
    Helwig, A.
    Mueller, G.
    Garrido, J. A.
    Eickhoff, M.
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 2008, 133 (01) : 156 - 165
  • [10] Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
    Sasama, Yosuke
    Kageura, Taisuke
    Komatsu, Katsuyoshi
    Moriyama, Satoshi
    Inoue, Jun-ichi
    Imura, Masataka
    Watanabe, Kenji
    Taniguchi, Takashi
    Uchihashi, Takashi
    Takahide, Yamaguchi
    [J]. JOURNAL OF APPLIED PHYSICS, 2020, 127 (18)