ZnO Nanowires As H2S Sensor

被引：0

作者：

Ramgir, N. S. ^{[1
]}

Rikka, V. ^{[1
]}

Kaur, M. ^{[1
]}

Ganapathi, S. Kailasa ^{[1
]}

Mishra, S. K. ^{[1
]}

Datta, N. ^{[1
]}

Aswal, D. K. ^{[1
]}

Gupta, S. K. ^{[1
]}

Yakhmi, J. V. ^{[1
]}

机构：

[1] Bhabha Atom Res Ctr, Tech Phys Div, Thin Films & Devices Sect, Bombay 400085, Maharashtra, India

来源：

INTERNATIONAL CONFERENCE ON PHYSICS OF EMERGING FUNCTIONAL MATERIALS (PEFM-2010) | 2010年 / 1313卷

关键词：

ZnO; nanowires; gas sensor; H(2)S; photoluminescence; GROWTH;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hydrothermal growth of ZnO nanowires were performed using ZnO nanoparticles as a seed layer. The growth was found to depend strongly on the reaction duration. These nanowires detected H(2)S with faster response and recovery time of 13 and 78 s, respectively towards 20 ppm at 350 degrees C. The lowest detection limit was improved to 0.6 ppm upon annealing in O(2) flow of 50 sccm. The response time was further improved to just 6 s towards 20 ppm of H(2)S at 350 degrees C. The enhanced response characteristics have been attributed to the high surface area to volume ratio of nanowires. Photoluminescence (PL) studies showed increase in the green emission related to defect states in ZnO. This is also expected to contribute for the improved sensing characteristics.

引用

页码：322 / 324

页数：3

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