Hysteresis-type current-voltage characteristics in Au/eumelanin/ITO/glass structure: Towards melanin based memory devices

被引：57

作者：

Ambrico, Marianna ^{[1
]}

Cardone, Antonio ^{[2
]}

Ligonzo, Teresa ^{[3
]}

Augelli, Vincenzo ^{[3
]}

Ambrico, Paolo Francesco ^{[1
]}

Cicco, Stefania ^{[2
]}

Farinola, Gianluca M. ^{[4
]}

Filannino, Michele ^{[3
]}

Perna, Giuseppe ^{[5
]}

Capozzi, Vito ^{[5
]}

机构：

[1] CNR UOS Bari, Inst Inorgan Methodol & Plasmas IMIP, I-70126 Bari, Italy

[2] CNR ICCOM UOS Bari, I-70126 Bari, Italy

[3] Univ Bari, Dipartimento Interateneo Fis, I-70126 Bari, Italy

[4] Univ Bari, Dipartmento Chim, I-70126 Bari, Italy

[5] Univ Foggia, Dept Biomed Sci, I-71100 Foggia, Italy

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 11期

关键词：

Eumelanin layer; Hysteresis effect; Memory device; OPTICAL-ABSORPTION; EUMELANIN; FILMS; SIMULATION; CHARGES; POLYMER; MODELS;

D O I：

10.1016/j.orgel.2010.08.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hysteresis behaviour of the current-voltage characteristics collected on spin coated synthetic eumelanin layer embedded in the Au/eumelanin/ITO/glass structure is shown. The effect has been observed under dark both in air and vacuum environment and its magnitude has been found related to the eumelanin hydration state. Moreover, in vacuum and under white light illumination, enhancement of the hysteresis loop area respect to those collected under dark has been observed. Space charge storage and charge trapping/detrapping as possible mechanisms responsible of the observed current-voltage behaviour are discussed. Preliminary experimental results have evidenced the possible integration of eumelanin layers in electro-optical charge storage based memory devices. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1809 / 1814

页数：6

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