Temperature-dependent photoluminescence and lasing properties of CsPbBr3 nanowires

被引:70
|
作者
Liu, Zhen [1 ,2 ,3 ]
Shang, Qiuyu [3 ]
Li, Chun [3 ,4 ]
Zhao, Liyun [3 ]
Gao, Yan [3 ]
Li, Qi [3 ]
Chen, Jie [4 ]
Zhang, Shuai [4 ]
Liu, Xinfeng [4 ]
Fu, Yingshuang [1 ,2 ]
Zhang, Qing [3 ,5 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Hubei, Peoples R China
[2] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Hubei, Peoples R China
[3] Peking Univ, Dept Mat Sci & Engn, Coll Engn, Beijing 100871, Peoples R China
[4] Natl Ctr Nanosci & Technol, CAS Key Lab Standardizat & Measurement Nanotechno, CAS Ctr Excellence Nanosci, Div Nanophoton, Beijing 100190, Peoples R China
[5] Southeast Univ, State Key Lab Bioelect, Nanjing 210096, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
HALIDE PEROVSKITES CSPBX3; LIGHT-EMITTING-DIODES; LEAD; LASERS; CRYSTAL; SILICON; BR; RECOMBINATION; LUMINESCENCE; ABSORPTION;
D O I
10.1063/1.5082759
中图分类号
O59 [应用物理学];
学科分类号
摘要
Exploring the exciton-phonon interaction of cesium lead bromide (CsPbBr3) perovskite nanowires (NWs) is not only important to the fundamental understanding of phonon-assisted carrier dynamics but also critical for the development of high performance miniaturized light sources. Herein, we systematically investigated the temperature (T) dependent spontaneous emission (SE) and lasing spectra of chemical vapor deposited CsPbBr3 NWs. We demonstrated that both the SE and the lasing energy were mainly determined by two facts: the electronphonon interaction (EP) and the lattice thermal expansion (TE). The lattice TE effect plays a key role at T similar to 78-170 K, therefore both the lasing and SE peaks exhibit a nearly linear blueshift with increasing T. As T > 195 K, the EP interaction becomes dominant, which reduces the blueshift rate of the SE peak and causes a redshift of lasing peaks. These findings will further advance the understanding of the excitonphonon interaction and the T-dependence of emission properties of lasers and related optoelectronic devices. Published under license by AIP Publishing.
引用
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页数:5
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