Single-mode Operation of 1.3-μm Membrane Distributed Reflector Lasers on SiC Wafers

被引：0
|
作者：
Yamaoka, Suguru [1 ]
Nakao, Ryo [1 ]
Fujii, Takuro [1 ]
Takeda, Koji [1 ]
Hiraki, Tatsurou [1 ]
Nishi, Hidetaka [1 ]
Kakitsuka, Takaaki [1 ]
Tsuchizawa, Tai [1 ]
Matsuo, Shinji [1 ]
机构：
[1] NTT Corp, NTT Device Technol Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan
来源：
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) | 2019年
关键词：
Membrane distributed reflector laser; Single-mode operation; SiC;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have fabricated a 1.3-mu m membrane distributed reflector (DR) lasers on a SiC substrate using direct-bonding and buried regrowth techniques. The side-mode suppression ratio of similar to 40 dB was obtained in roomtemperature continuous-wave (RT-CW) operation.
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页数：2
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