Hexagonal growth spirals on GaN grown by molecular-beam epitaxy: Kinetics versus thermodynamics

被引：13
|
作者：
Parkhomovsky, A [1 ]
Dabiran, AM
Benjaminsson, B
Cohen, PI
机构：
[1] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA
[2] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 16期
关键词：
D O I：
10.1063/1.1361278
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaN grown by molecular-beam epitaxy on Ga-polar GaN templates prepared by metal organic chemical vapor deposition shows a variety of morphologies that depend on defects and growth conditions. We measured the mean terrace widths of hexagonal growth spirals or hillocks versus ammonia and Ga fluxes and substrate temperature. The measurements were compared to a near equilibrium model of the growth. The results indicate that under excess Ga growth conditions, Ga-polar GaN(0001) has a mean step-edge energy of 0.27 eV/Angstrom. (C) 2001 American Institute of Physics.
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页码：2315 / 2317
页数：3
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