Microstructure and transport properties of Y-doped zirconia and Gd-doped ceria

被引：9
|
作者：
Petot-Ervas, G [1 ]
Petot, C
Zientara, D
Kusinski, J
机构：
[1] Ecole Cent Paris, UMR 8580, CNRS, Lab SPMS, F-92295 Chatenay Malabry, France
[2] Acad Min & Met, Krakow, Poland
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2003年 / 81卷 / 2-3期
关键词：
electrical conductivity; transmission electron microscopy; glassy phases; Gd-doped ceria; Y-doped zirconia;
D O I：
10.1016/S0254-0584(02)00588-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transmission electron microscopy (TEM) characterization has allowed us to show the influence of the microstructure on the grain boundary electrical conductivity (sigma(gb)) of Y-doped zirconia (YSZ) and Gd-doped ceria. For the Y2O3 (9 mol%)-doped zirconia samples, agb increases with the grain size and the results depend on the powder elaboration process and sintering conditions. These effects are due to wettability changes of the glassy phases at the grain boundaries. On the contrary, for the Gd2O3 (10 mol%)-doped ceria samples, sigma(gb) decreases when the grain size increases and the results are not influenced by the batch of powder likely due to grain boundaries free of detectable glassy phases. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：305 / 307
页数：3
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