Temperature-dependent noise parameters and modeling of InP/InAlAs/InGaAs HEMTs

被引：0

作者：

Murti, MR ^{[1
]}

Yoo, S ^{[1
]}

Raghavan, A ^{[1
]}

Nuttinck, S ^{[1
]}

Laskar, J ^{[1
]}

Bautista, J ^{[1
]}

Lai, R ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch ECE, Atlanta, GA 30332 USA

来源：

2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present the small-signal and noise modeling of InP/In0.8Ga0.2As HEMTs at cryogenic temperatures. The effect of various physical mechanisms influencing the small-signal parameters, especially the RF transconductance and RF output resistance and their temperature dependence are discussed in detail. Accurate on-wafer noise parameter measurements are carried out on InP HEMTs from 300 K to 18 K and the variation of the equivalent noise temperatures of drain and source (T-d and T-g) are modeled against temperature. A cryogenic LNA in the Ka-band with a noise temperature of 10 K has been demonstrated.

引用

页码：1241 / 1244

页数：4

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