Stretchable Semiconductor Technologies with High Areal Coverages and Strain-Limiting Behavior: Demonstration in High-Efficiency Dual-Junction GaInP/GaAs Photovoltaics

被引:93
|
作者
Lee, Jongho [2 ]
Wu, Jian [3 ]
Ryu, Jae Ha
Liu, Zhuangjian [4 ]
Meitl, Matthew [5 ]
Zhang, Yong-Wei [4 ]
Huang, Yonggang [6 ]
Rogers, John A. [1 ]
机构
[1] Univ Illinois, Dept Mat Sci & Engn,Frederick Seitz Mat Res Lab, Dept Mech Sci & Engn,Dept Elect & Comp Engn, Beckman Inst Adv Sci & Technol,Dept Chem, Urbana, IL 61801 USA
[2] Gwangju Inst Sci & Technol GIST, Dept Mech, Kwangju 500712, South Korea
[3] Tsinghua Univ, Dept Engn Mech, Beijing 100084, Peoples R China
[4] Inst High Performance Comp, Singapore 138632, Singapore
[5] Semprius, Durham, NC 27713 USA
[6] Northwestern Univ, Dept Mech Engn Civil & Environm Engn, Evanston, IL 60208 USA
关键词
photovoltaics; stretchable materials; solar cells; GaAs; GaInP; GAAS PHOTOVOLTAICS; SILICON; ELECTRONICS; DESIGNS; OPTOELECTRONICS; INTERCONNECTS; CONDUCTORS; CIRCUITS;
D O I
10.1002/smll.201102437
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Notched islands on a thin elastomeric substrate serve as a platform for dual-junction GaInP/GaAs solar cells with microscale dimensions and ultrathin forms for stretchable photovoltaic modules. These designs allow for a high degree of stretchability and areal coverage, and they provide a natural form of strain-limiting behavior, helping to avoid destructive effects of extreme deformations. © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:1851 / 1856
页数:6
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