Free vibration of a piezoelectric semiconductor plate

被引:15
|
作者
Guo, Jianyu [2 ,4 ]
Nie, Guoquan [1 ,2 ]
Liu, Jinxi [1 ,3 ]
Zhang, Lele [3 ]
机构
[1] Shijiazhuang Tiedao Univ, State Key Lab Mech Behav & Syst Safety Traff Engn, Shijiazhuang 050043, Hebei, Peoples R China
[2] Shijiazhuang Tiedao Univ, Sch Mech Engn, Shijiazhuang 050043, Hebei, Peoples R China
[3] Shijiazhuang Tiedao Univ, Dept Engn Mech, Shijiazhuang 050043, Hebei, Peoples R China
[4] Hebei Univ Engn, Sch Civil Engn, Handan 056038, Peoples R China
基金
中国国家自然科学基金;
关键词
Piezoelectric semiconductor; Plate; Free vibration; Natural frequency; Hamilton principle; FIELD-EFFECT TRANSISTOR; ZNO NANOWIRE; THIN-FILM; ELECTROMECHANICAL FIELDS; CARRIER DISTRIBUTION; PERFORMANCE;
D O I
10.1016/j.euromechsol.2022.104647
中图分类号
O3 [力学];
学科分类号
08 ; 0801 ;
摘要
We analyze free vibration of a piezoelectric semiconductor (PSC) plate taking account of the coupling between deformation, polarization and carriers within the framework of the first-order shear deformation theory. The PSC plate is subjected to a biaxial force and an external electric voltage. The governing equations and corresponding boundary conditions are derived using Hamilton principle. An analytical solution for a simply supported PSC plate is obtained. A detailed parametric study is conducted to discuss the effects of steady-state carrier density, axial force, external electric voltage, length-to-thickness ratio and length-to-width ratio on the free vibration characteristics of the PSC plate. The numerical results show that the steady-state carrier density has a significantly influence on natural frequency of the PSC plate in a certain range. The vibration frequency decreases when the plate is subjected to the axial compression and the positive external voltage. The vibration frequency increases with the increase of length-width ratio of and also increases with the decrease of length-thickness ratio of the PSC plate. This work may be useful for the analysis and design of electron devices made from PSC materials.
引用
收藏
页数:11
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