Ultimate limits for the radiation hardness of silicon strip detectors for sLHC

被引：2
|
作者：
Lozano, M. [1 ]
Campabadal, F.
Garcia, C.
Gonzalez-Sevilla, S.
Lacasta, C.
Lacuesta, V.
Marti, S.
Minano, M.
Pellegrini, G.
Ullan, M.
Rafi, J. M.
机构：
[1] Univ Autonoma Barcelona, Ctr Nacl Microelect, IMB, CSIC, E-08193 Barcelona, Spain
[2] IFIC CSIC, Inst Fis Corpuscular, Valencia, Spain
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2007年 / 581卷 / 1-2期
关键词：
silicon detectors; p-type; microstrip; sLHC; radiation hardness;
D O I：
10.1016/j.nima.2007.08.006
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The new SuperLHC upgrade will impose severe restrictions on the radiation hardness of silicon detectors since a maximum fluence of 10(16) particles/cm(2) is foreseen in the innermost region. Microstrip detectors have been fabricated in p-type high resistivity float zone silicon at CNM facilities, been irradiated at the TRIGA reactor in Ljubljana to a fluence of 10(16) neutrons/CM2 and characterized at IFIC laboratory. The total collected charge before and after irradiation in the detectors has been measured by Sr-90 beta source and by infrared laser illumination. The results show that even after this extreme radiation fluence, p-type substrate detectors collect 3500 electrons when biased at 800 V, which is enough charge to induce a measurable signal with standard readout electronics. P-type strip detectors could be suitable for the middle and even inner regions of sLHC. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：365 / 367
页数：3
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