Capacitance-Voltage(C-V) Characteristics of InGaAs/InAs/InGaAs Quantum Well MOSFET

被引：0
|
作者：
Datta, Kanak [1 ]
Biswas, Sudipta Romen [1 ]
Rahman, Ehsanur [1 ]
Shadman, Abir [1 ]
Khosru, Quazi D. M. [1 ]
机构：
[1] Bangladesh Univ Engn & Technol, Dept Elect & Elect Engn, Dhaka 1000, Bangladesh
来源：
PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2015年
关键词：
Quantum Well MOSFET; Strain; Delta Doping; III-V Semiconductors; C-V Characteristics;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, the Capacitance-Voltage(C-V) characteristics of a InxGa1-xAs/InAs/InxGa1-xAs Quantum-Well (QW) MOSFET is investigated. 1D coupled Schrodinger-Poisson equations are solved self consistently by Finite Element Method (FEM) using COMSOL coupled with MATLAB to extract the charge density profile and Capacitance-Voltage profile. Effects of strain in the In Ga1-xAs/InAs/InxGa1-xAs Quantum-Well channel are also investigated. At the same time, effects of various device and process parameters like dielectric material, channel thickness and doping density on the C-V characteristics are also explored. The extracted C-V profile is also compared with the results obtained using SILVACO ATLAS.
引用
收藏
页码：709 / 712
页数：4
相关论文
共 50 条
  • [1] Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling
    Chen, JF
    Hsiao, RS
    Chen, YP
    Wang, JS
    Chi, JY
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (14) : 1 - 3
  • [2] Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well
    Ban, K-Y
    Dahal, S. N.
    Honsberg, C. B.
    Nataraj, L.
    Bremner, S. P.
    Cloutier, S. G.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (03):
  • [3] Characterization and modeling of InGaAs/GaAs multi-quantum well lasers by capacitance-voltage measurements
    Arias, J
    Esquivias, I
    Burkner, S
    Chazan, P
    Ralston, JD
    Larkins, EC
    Mikulla, M
    Weisser, S
    Rosenzweig, J
    [J]. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES V, 1997, 2994 : 534 - 541
  • [4] Capacitance-voltage characteristics of quantum well structures
    Moon, CR
    Lim, H
    Choe, BD
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 34 : S77 - S80
  • [5] Quantum Ballistic Simulation Study of InGaAs/InAs/InGaAs Quantum Well MOSFET: Effects of Doping and Physical Device Parameters
    Biswas, Sudipta Romen
    Datta, Kanak
    Rahman, Ehsanur
    Shadman, Abir
    Khosru, Quazi D. M.
    [J]. 2014 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE), 2014, : 36 - 39
  • [6] Spectral characteristics of single InAs/InGaAs quantum dots in a quantum well
    Worschech, L
    Kaiser, S
    Mensing, T
    Klopf, F
    Reithmaier, JP
    Forchel, A
    [J]. 2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, 2003, : 1133 - 1136
  • [7] AUTOMATIC CAPACITANCE-VOLTAGE (C-V) PLOTTER FOR SOLAR-CELLS
    PURSHOTHAM, M
    DAS, SR
    MUKERJEE, AK
    CHOPRA, KL
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1982, 53 (11): : 1749 - 1753
  • [8] Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes
    Kim, Hogyoung
    [J]. TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2016, 17 (05) : 293 - 296
  • [9] Self-Consistent C-V Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects
    Ahmed, Imtiaz
    Niaz, Iftikhar Ahmad
    Alam, Md. Hasibul
    Chowdhury, Nadim
    Al Azim, Zubair
    Khosru, Quazi Deen Mohd
    [J]. IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS DESIGN, SYSTEMS AND APPLICATIONS (ICEDSA 2012), 2012, : 75 - 79
  • [10] Capacitance-Voltage (C-V ) Characterization of Graphene-Silicon Heterojunction Photodiodes
    Riazimehr, Sarah
    Belete, Melkamu
    Kataria, Satender
    Engstroem, Olof
    Lemme, Max Christian
    [J]. ADVANCED OPTICAL MATERIALS, 2020, 8 (13):
12345