Fabrication of Silicon Nitride Ceramics with Magnesium Silicon Nitride and Yttrium Oxide as Sintering Additives

被引：0

作者：

Jiang Guojian ^{[1
]}

Xu Jiayue ^{[1
]}

Shen Hui ^{[1
]}

Zhang Yan ^{[1
]}

Peng Guihua ^{[2
]}

Zhuang Hanrui ^{[3
]}

Li Wenlan ^{[3
]}

Xu Suying ^{[3
]}

Mao Yongjun ^{[4
]}

机构：

[1] Shanghai Inst Technol, Shanghai 200235, Peoples R China

[2] Guangxi Normal Univ, Guilin 541004, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

[4] Shanghai Univ, Shanghai 200444, Peoples R China

来源：

TESTING AND EVALUATION OF INORGANIC MATERIALS I | 2011年 / 177卷

关键词：

Si3N4; ceramics; MgSiN2; Puressureless sintering; Hot-pressing sintering; THERMAL-CONDUCTIVITY; MGSIN2; ADDITION;

D O I：

10.4028/www.scientific.net/AMR.177.235

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Si3N4 ceramics have been fabricated through pressureless sintering and hot-pressing sintering with MgSiN2-Y2O3 or only MgSiN2 as sintering additive, respectively. The effects of MgSiN2 and Y2O3 and sintering methods on sintering properties of Si3N4 ceramics were studied. The results indicate that the bend strength of Si3N4 ceramic with 5.6wt.%MgSiN2-15.8wt.%Y2O3 sintered at 1820 degrees C for 4h could achieve 839MPa. The bend strength of Si3N4 ceramic with 4.76wt.%MgSiN2 produced by hot-pressing sintering at 1750 degrees C for 1h under uniaxial pressure of 20MPa is 1149MPa. The thermal conductivity of the Si3N4 ceramic was 92W.m(-1).K-1 and could remarkably increase to 129W.m(-1).K-1 by prolonging the sintering time from 1 h to 12 h. The present work demonstrated that MgSiN2 additives and hot-pressing sintering were effective to improve the thermal conductivity of Si3N4 ceramic.

引用

页码：235 / +

页数：2

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