STABILIZED DOMAIN-WALL PINNING IN A CONSTRICTED NANOWIRE

The typical characteristics of spin that relate to logical applications and memory are part of domain walls, where they are utilized as information carriers. Magnetic skyrmions also fall under the above category and their unique topology enables them to exhibit distinct characteristics of a dynamic nature in comparison with domain walls. A novel method of accurately binding a domain wall with a magnetic nanowire is proposed. The domain wall is stapled, at the desired position, to the proposed stepped nanowire, forming a new structure with a simple offset of two single nanowires. The domain wall can be precisely stabilized by creating a stepped nanowire. The parameters of the nanowire such as the size of the step, the properties of the materials and the dimensions are strongly dependent on the critical current regarding the depinning of the domain wall. A low depinning current is required for a wide nanowire. We address the current-induced domain wall in a compressed nanowire computationally via a computer algorithm and simulate the pinning of the domain wall in the compressed region via a graphic-processing-unit (GPU) accelerated micromagnetic simulation framework. Further, in the paper, we investigate the design of the device physics, multiple-bit per single cell memory, utilized in high-performance computing and vision systems.