Scanning tunneling microscopy and spectroscopy of tin oxide films

被引：3

作者：

Castro, MS ^{[1
]}

Suárez, MP ^{[1
]}

Aldao, CM ^{[1
]}

机构：

[1] Univ Mar del Plata, Inst Mat Sci & Technol, CONICET, RA-7600 Mar Del Plata, Argentina

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2001年 / 21卷 / 08期

关键词：

defects; electrical properties; films; grain boundaries; sensors; SnO2;

D O I：

10.1016/S0955-2219(00)00297-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SnO2 thick films have been studied with scanning tunneling microscopy and spectroscopy. Topographic images revealed grains with an average diameter of about 100 nm and roughness of 50 nm. Tunneling current-voltage characteristics measured indicate that these small grains present a non rectifying behavior. Temperature dependence of electrical conductivity during healing and cooling and resistivity transients at step isothermal changes in oxygen pressure were also investigated. Results are consistent with those of STM and confirm that oxygen adsorption and diffusion into the tin oxide grain account for the observed conductance changes. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1115 / 1119

页数：5

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