Inverse spin Hall effect in Pt/(Ga,Mn)As

被引：4
|
作者：
Nakayama, H. [1 ]
Chen, L. [2 ]
Chang, H. W. [1 ,3 ,4 ]
Ohno, H. [1 ,2 ,5 ]
Matsukura, F. [1 ,2 ,5 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, WPI Adv Inst Mat Res WPI AIMR, Aoba Ku, Sendai, Miyagi 9808577, Japan
[3] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
[4] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan
[5] Tohoku Univ, Ctr Spintron Integrated Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 22期
关键词：
FERROMAGNETIC-RESONANCE; TEMPERATURE; GA1-XMNXAS;
D O I：
10.1063/1.4922197
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10(19) m(-2), which is about ten times greater than that of (Ga,Mn)As/p-GaAs. (C) 2015 AIP Publishing LLC.
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页数：4
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