Nanoscale electrolytic switching in phase-change chalcogenide films

被引：46
|
作者：
Pandian, Ramanathaswamy [1 ,2 ]
Kooi, Bart J. [1 ,2 ]
Palasantzas, George [1 ,2 ]
De Hosson, Jeff T. M. [1 ,2 ]
Pauza, Andrew [3 ]
机构：
[1] Univ Groningen, Zernike Inst Adv Mat, Dept Appl Phys, NL-9747 AG Groningen, Netherlands
[2] Univ Groningen, Netherlands Inst Met Res, NL-9747 AG Groningen, Netherlands
[3] Plasmon Data Syst Ltd, Melbourn Royston SG8 6EN, Herts, England
来源：
ADVANCED MATERIALS | 2007年 / 19卷 / 24期
关键词：
D O I：
10.1002/adma.200700904
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
[GRAPHICS] Reversible polarity-dependent resistance (PDR) switching in phase-change (PC) films is feasible. Nanometer-scale crystalline marks are produced in amorphous Ge2Sb2+xTe5 films by electrical pulses through an AFM tip. In these marks, PDR switching is demonstrated with three orders of magnitude current contrast using less than 1.5 V. No current contrast between the crystalline marks in the high-resistance state and the amorphous if background is observed.
引用
收藏
页码：4431 / +
页数：8
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