Graphene on graphene antidot lattices: Electronic and transport properties

被引:16
|
作者
Gregersen, Soren Schou [1 ]
Pedersen, Jesper Goor [1 ]
Power, Stephen R. [1 ]
Jauho, Antti-Pekka [1 ]
机构
[1] Tech Univ Denmark, CNG, Dept Micro & Nanotechnol Engn, DK-2800 Lyngby, Denmark
关键词
MONOLAYER GRAPHENE; BAND-GAP; BILAYER; TRANSISTORS; STATE; EDGES;
D O I
10.1103/PhysRevB.91.115424
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion. Here, we introduce a bilayer graphene heterostructure, where single-layer graphene is placed on top of another layer of graphene with a regular lattice of antidots. We dub this class of graphene systems GOAL: graphene on graphene antidot lattice. By varying the structure geometry, band-structure engineering can be performed to obtain linearly dispersing bands (with a high concomitant mobility), which nevertheless can be made gapped with a perpendicular field. We analyze the electronic structure and transport properties of various types of GOALs, and draw general conclusions about their properties to aid their design in experiments.
引用
收藏
页数:12
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