Overcoming the Limits of the Interfacial Dzyaloshinskii-Moriya Interaction by Antiferromagnetic Order in Multiferroic Heterostructures

被引:39
|
作者
Wang, Han [1 ]
Dai, Yingying [2 ]
Liu, Zhongran [3 ]
Xie, Qidong [1 ]
Liu, Chao [1 ]
Lin, Weinan [1 ]
Liu, Liang [1 ]
Yang, Ping [4 ]
Wang, John [1 ]
Venkatesan, Thirumalai Venky [1 ,5 ]
Chow, Gan Moog [1 ]
Tian, He [3 ]
Zhang, Zhidong [2 ]
Chen, Jingsheng [1 ]
机构
[1] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore
[2] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
[3] Zhejiang Univ, Ctr Electron Microscope, State Key Lab Silicon Mat, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China
[4] Natl Univ Singapore, SSLS, Singapore 117603, Singapore
[5] Natl Univ Singapore, NUSNNI Nanocore, Singapore 117411, Singapore
基金
中国国家自然科学基金; 新加坡国家研究基金会;
关键词
antiferromagnetic order; interfacial Dzyaloshinskii-Moriya interaction; magnetic topological states; multiferroic heterostructures; topological Hall effect;
D O I
10.1002/adma.201904415
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Topologically protected magnetic states have a variety of potential applications in future spintronics owing to their nanoscale size (<100 nm) and unique dynamics. These fascinating states, however, usually are located at the interfaces or surfaces of ultrathin systems due to the short interaction range of the Dzyaloshinskii-Moriya interaction (DMI). Here, magnetic topological states in a 40-unit cells (16 nm) SrRuO3 layer are successfully created via an interlayer exchange coupling mechanism and the interfacial DMI. By controlling the thickness of an antiferromagnetic and ferromagnetic layer, interfacial ionic polarization, as well as the transformation between ferromagnetic and magnetic topological states, can be modulated. Using micromagnetic simulations, the formation and stability of robust magnetic skyrmions in SrRuO3/BiFeO3 heterostructures are elucidated. Magnetic skyrmions in thick multiferroic heterostructures are promising for the development of topological electronics as well as rendering a practical approach to extend the interfacial topological phenomena to bulk via antiferromagnetic order.
引用
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页数:9
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