Low threshold high efficiency InAs/InGaAlAs/InP ∼1.55 μm quantum dash-in-a-well lasers

被引：1
|
作者：
Hein, S. [1 ]
Somers, A. [1 ]
Hoefling, S. [1 ]
Forchel, A. [1 ]
机构：
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
来源：
2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2007年
关键词：
D O I：
10.1109/ICIPRM.2007.381178
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A dash-in-a-well design was employed to realise low threshold high efficiency lasers in the InAs/InGaAlAs/InP material system emitting near 1.55 mu m. A processed 1.0 mm long and 5 mu m wide as-cleaved and un-mounted Fabry Perot device reveals a threshold current as low as 47 mA, a total external efficiency of 0.36 W/A and a maximum total output power of 58 mW in cw operation at room temperature. The maximum cw operating temperature is 85 degrees C with a T-0 of 61 K in the range from 15 degrees C to 75 degrees C.
引用
收藏
页码：281 / 284
页数：4
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