Deposited dielectrics on metal thin films using silicon and glass substrates for hot electron-induced electrochemiluminescence

被引:9
|
作者
Niskanen, Antti J. [1 ,2 ]
Ylinen-Hinkka, Tiina [3 ]
Pusa, Matti [3 ]
Kulmala, Sakari [3 ]
Franssila, Sami [1 ]
机构
[1] Aalto Univ, Sch Sci & Technol, Dept Mat Sci & Engn, FI-00076 Aalto, Finland
[2] Aalto Univ, Sch Sci & Technol, Dept Micro & Nanosci, FI-00076 Aalto, Finland
[3] Aalto Univ, Sch Sci & Technol, Analyt Chem Lab, FI-00076 Aalto, Finland
关键词
Electrochemiluminescence; Chemiluminescence; Thin insulating; Film-coated electrodes; Chemical vapor deposition; Atomic layer deposition; COVERED ALUMINUM ELECTRODES; TIME-RESOLVED DETECTION; OXIDE FILMS; LAYER; INJECTION; ALD;
D O I
10.1016/j.tsf.2010.07.027
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electrochemiluminescence by tunnel emission of hot electrons into aqueous solution is a sensitive method for detection of luminophores e.g. rare-earth chelates, which may be used as labels in bioassays. Electrons are injected into solution from an insulating film-coated working electrode, working against a platinum counter electrode. Conductive silicon electrodes with various tunnel dielectric materials e.g. thermal oxide have been used in previous work. In this paper we explore the use of metal thin film electrodes on silicon and glass substrates, using tunneling dielectrics of aluminum oxide and silicon dioxide made by the low-temperature processes of atomic layer deposition or plasma-enhanced chemical vapor deposition. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:430 / 433
页数:4
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