Ambipolar Oxide Thin-Film Transistor

被引：233
|
作者：
Nomura, Kenji [1 ]
Kamiya, Toshio [2 ]
Hosono, Hideo [1 ,2 ]
机构：
[1] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
ADVANCED MATERIALS | 2011年 / 23卷 / 30期
基金：
日本学术振兴会;
关键词：
TRANSPORT; ELECTRON;
D O I：
10.1002/adma.201101410
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The first ambipolar oxide-based thin-film transistor (TFT) using an SnO channel is presented, demonstrating operation of a complementary-like inverter configured by two ambipolar SnO TFTs. Saturation mobilities of similar to 0.8 and similar to 5 x 10(-4) cm(2) V-1 s(-1) are obtained for the p-channel and n-channel modes, respectively, and the inverter shows a maximum voltage gain of similar to 2.5. This is the first demonstration of a complementary-like circuit using a single oxide semiconductor channel and provides an important step toward practical oxide electronics.
引用
收藏
页码：3431 / +
页数：5
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