Naphthoylene(trifluoromethylbenzimidazole)-dicarboxylic acid imides for high-performance n-type organic field-effect transistors

被引：30
|
作者：
Deng, Ping [1 ]
Yan, Yan [2 ]
Wang, Sui-Dong [2 ]
Zhang, Qing [1 ]
机构：
[1] Shanghai Jiao Tong Univ, Dept Polymer Sci & Engn, Sch Chem & Chem Engn, Shanghai 200240, Peoples R China
[2] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China
来源：
CHEMICAL COMMUNICATIONS | 2012年 / 48卷 / 20期
基金：
中国国家自然科学基金;
关键词：
THIN-FILM TRANSISTORS; HIGH-ELECTRON-MOBILITY; EXPANDED NAPHTHALENE DIIMIDES; HETEROCYCLIC OLIGOMERS; HOPPING TRANSPORT; SEMICONDUCTORS; DERIVATIVES;
D O I：
10.1039/c2cc17272k
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
1,8-Naphthoylene(trifluoromethylbenzimidazole)-4,5-dicarboxylic acid imide (NTFBII) derivatives were synthesized. The OFET devices based on these new materials showed typical n-type OFET behavior and achieved an electron mobility as high as 0.10 cm(2) V-1 s(-1) with good bias stress stability.
引用
收藏
页码：2591 / 2593
页数：3
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