Evidence concerning the effect of topology on electrical switching in chalcogenide network glasses

被引:67
|
作者
Narayanan, RA
Asokan, S
Kumar, A
机构
[1] INDIAN INST SCI,DEPT INSTRUMENTAT,BANGALORE 560012,KARNATAKA,INDIA
[2] INDIAN INST SCI,DEPT PHYS,BANGALORE 560012,KARNATAKA,INDIA
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 07期
关键词
D O I
10.1103/PhysRevB.54.4413
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electrical switching properties of Ge-As-Te glasses have been investigated over a wide range of mean coordination numbers ([r]) in a single composition tie line. The results obtained clearly indicate; the modulation of the composition dependence of switching fields by network topology. Distinct change is observed in the slope of the composition dependence of switching field, at x = 25 ([r] = 2.4) and x = 52.5 ([r] = 2.67), which correspond to mechanical and chemical thresholds, respectively. Present results also rule out the earlier suggestions such as shilling of percolation threshold to higher [r] values and the likelihood of two isolated rigidity percolation thresholds in such glass systems.
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页码:4413 / 4415
页数:3
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