Extremely wide lasing bandwidth from InAs/InP quantum-dash ridge-waveguide laser near 1.6 μm

被引：0
|
作者：
Khan, M. Z. M. [1 ]
Ng, Tien K. [1 ]
Lee, C-S. [2 ]
Bhattacharya, P. [2 ]
Ooi, Boon S. [1 ]
机构：
[1] KAUST, Photon Lab, Thuwal 239556900, Saudi Arabia
[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
来源：
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2013年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate an ultra-broad lasing bandwidth (-3dB) of > 50 nm utilizing InAs/InGaAlAs/InP quantum-dash ridge-waveguide laser using chirped AlGaInAs barrier layer thickness. Our device exhibits a recorded bandwidth and significant improvement of laser characteristics.
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页数：2
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