Strain accommodation of 3C-SiC grown on hydrogen-implanted Si (001) substrate

被引：3

作者：

Zhang, ZC ^{[1
]}

Chen, YH

Li, DB

Zhang, FQ

Yang, SY

Ma, BS

Sun, GS

Wang, ZG

Zhang, XP

机构：

[1] Chinese Acad Sci, Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China

[2] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 257卷 / 3-4期

关键词：

substrate; heteroepitaxy; low pressure chemical vapor deposition; semiconducting silicon carbide;

D O I：

10.1016/S0022-0248(03)01476-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The hydrogen-implanted Si substrate has been used for the fabrication of the "compliant substrate", which can accommodate the mismatch strain during the heteroepitaxy. The compliance of the substrate can be modulated by the energy and dose of implanted hydrogen. In addition, the defects caused by implantation act as the gettering center for the internal gettering of the harmful metallic impurities. Compared with SiC films growth on substrate without implantation. all the measurements indicated that the mismatch strains in the SiC films grown on this substrate have been released and the crystalline qualities have been improved. It is a practical technique used for the compliant substrate fabrication and compatible with the semiconductor industry. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：321 / 325

页数：5

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