Growth mechanisms in semipolar (20(2)over-bar1) and nonpolar m plane (10(1)over-bar0) AlGaN/GaN structures grown by PAMBE under N-rich conditions (vol 377C, pg 184, 2013)

被引:1
|
作者
Sawicka, M. [1 ,2 ]
Cheze, C. [2 ]
Turski, H. [1 ]
Smalc-Koziorowska, J. [1 ,2 ]
Krysko, M. [1 ]
Kret, S. [3 ]
Remmele, T. [4 ]
Albrecht, M. [4 ]
Cywinski, G. [1 ]
Grzegory, I. [1 ]
Skierbiszewski, C. [1 ,2 ]
机构
[1] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland
[2] TopGaN Sp Zoo, PL-01142 Warsaw, Poland
[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[4] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany
关键词
D O I
10.1016/j.jcrysgro.2015.01.014
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:176 / 176
页数:1
相关论文
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  • [1] Growth mechanisms in semipolar (2 0 (2)over-bar 1) and nonpolar m-plane (1 0 (1)over-bar 0) AlGaN/GaN structures grown by PAMBE under N-rich conditions
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    Turski, H.
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