One-dimensional II-VI nanostructures: Synthesis, properties and optoelectronic applications

被引：285
|
作者：
Jie, Jiansheng [1 ,2 ,3 ]
Zhang, Wenjun [1 ,2 ]
Bello, Igor [1 ,2 ]
Lee, Chun-Sing [1 ,2 ]
Lee, Shuit-Tong [1 ,2 ]
机构：
[1] City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
[3] Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China
来源：
NANO TODAY | 2010年 / 5卷 / 04期
基金：
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词：
II-VI nanostructures; Synthesis; Doping; Optoelectronic devices; FIELD-EFFECT TRANSISTORS; ATOMIC LAYER DEPOSITION; ZNSE NANOWIRES; SCHOTTKY DIODES; LASER-ABLATION; DOPED ZNS; ELECTRICAL-PROPERTIES; HOMOEPITAXIAL GROWTH; OPTICAL-PROPERTIES; LASING PROPERTIES;
D O I：
10.1016/j.nantod.2010.06.009
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The distinct properties of II-VI nanostructures have opened new opportunities for the applications of II-VI semiconductor materials in electronics and optoelectronics. Herein, we present a comprehensive review on the recent advances in the synthesis, properties and optoelectronic applications of one-dimensional II-VI nanostructures. In particular, the approaches to manipulate the electronic, optoelectronic, and transport properties of II-VI nanostructures by controlled doping and the latest progresses in fabricating high-performance II-VI nanoelectronic and nano-optoelectronic devices are discussed. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：313 / 336
页数：24
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