Air-Stable Crystalline Polymer-Based Field-Effect Transistors Fabricated by a Thermal Gradient Process

被引:3
|
作者
Chou, Wei-Yang [1 ]
Fang, Po-Hsiang [1 ]
Wu, Fu-Chiao [1 ]
Tien, Yi-Chen [1 ]
Sheu, Hwo-Shuenn [2 ]
Cheng, Horng-Long [1 ]
Ruan, Jrjeng [3 ]
机构
[1] Natl Cheng Kung Univ, Dept Photon, Tainan 70101, Taiwan
[2] Natl Synchrotron Radiat Res Ctr NSRRC, Hsinchu 30076, Taiwan
[3] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan
关键词
CHARGE-TRANSPORT; ORGANIC TRANSISTORS; DERIVATIVES; DESIGN;
D O I
10.1021/acs.cgd.2c00138
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Low-voltage-driven organic field-effect transistors (OFETs) with an organic polymer p-type semiconductor poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-b] thiophene) (PBTTT-C-14) as the active layer were explored for the processing and crystallization of polymer semiconductors whose opto-electronic properties critically depend on the microstructure. (HMB)/PBTTT-C-14 mixtures using a thermal gradient system to yield fiber- like crystals with up to 0.8 mu m in width and to fabricate crystalline PBTTT-C-14-based OFETs. In the thermal gradient system, the HMB separated from the HMB/PBTTT-C-14 mixtures and crystallized along the samples' moving direction. The crystals' physical properties characterized by in situ atomic force microscopy and Raman spectroscopy at different temperatures revealed that the HMB-processed PBTTT-C-14 thin film can improve the microstructure and achieve a directionally crystalline structure. These results combined with theoretical calculations show a high degree of pi-stacking within the crystalline PBTTT-C-14 (c-PBTTT-C-14) crystal. c-PBTTT-C-14 has good crystallinity, which enhances the intra- and intermolecular transmission of electrons. Whether in a nitrogen-filled glovebox or in the atmosphere, the electrical performances of the c-PBTTT-C-14-based OFET had a remarkable increase compared with those of the spin-coated PBTTT-C-14-based OFET. This phenomenon was also observed in the crystalline P3HT-based OFET fabricated by the same thermal gradient system.
引用
收藏
页码:3760 / 3769
页数:10
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