Some properties of Cu-SiC composites produced by powder metallurgy method

This study reports some properties of copper matrix composite reinforced with silicon carbide at ratios of 1, 2, 3 and 5 % by weight manufactured by powder metallurgy method. Composite powders were pressed by applying a uniaxial pressure of 280 MPa and sintered at 900 degrees C for 2 h in graphite powder. Optical and SEM studies revealed that SiC particles were located around Cu grains. The presence of Cu and SiC components in composites were verified by XRD analysis technique. The hardness of sintered compacts ranged from 104 to 108 HBN. The relative densities of Cu-SiC composites determined according to Archimedes' principle changed between 96.45 and 89.61 %. Electrical conductivities of Cu-SiC composites varied between 87.1 and 55.2 % TACS. As SiC content increases, hardness increases, but relative densities and electrical conductivities decrease. An attempt was made to investigate the possibility of predicting contour diagram of electrical conductivity variation.