Growth of thiourea-doped TGS crystals and their characterisation

被引：30
|
作者：
Meera, K [1 ]
Muralidharan, R
Tripathi, AK
Dhanasekaran, R
Ramasamy, P
机构：
[1] Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India
[2] Indian Inst Technol, Dept Phys, New Delhi, India
来源：
JOURNAL OF CRYSTAL GROWTH | 2004年 / 260卷 / 3-4期
关键词：
characterisation; growth from solutions; ThTGS crystal; dielectric materials; ferroelectric materials; piezoelectric materials;
D O I：
10.1016/j.jcrysgro.2003.08.028
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Thiourea-doped Triglycine sulphate (ThTGS) crystal with three different concentrations of thiourea was grown from aqueous solution by slow cooling technique. The cell parameters were determined from powder X-ray diffraction analysis. A qualitative analysis of the presence of thiourea in doped crystals was estimated by FTIR analysis. Microhardness studies were carried out using Leitz Weitzler hardness tester at room temperature. Dielectric properties of the crystals were studied which showed a shift in the T-c when compared to pure TGS crystal. Pyroelectric studies were carried out and the pyroelectric coefficient was found. Piezoelectric studies (d(33) coefficient) has also been carried out. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：414 / 421
页数：8
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