Junction Leakage Random Telegraph Signals in Arrays of MOSFETs

被引：0
|
作者：
Dewitte, H. [1 ]
Goiffon, V [1 ]
Le Roch, A. [1 ]
Rizzolo, S. [2 ]
Jay, A. [3 ]
Jech, M. [4 ]
Hemeryck, A. [3 ]
Paillet, P. [5 ]
机构：
[1] Univ Toulouse, ISAE SUPAERO, F-31055 Toulouse, France
[2] Airbus Def & Space SAS, F-31400 Toulouse, France
[3] Univ Toulouse, CNRS, LAAS CNRS, F-31062 Toulouse, France
[4] TU Wien, Inst Microelect, A-1040 Vienna, Austria
[5] CEA, DAM, DIF, F-91297 Arpajon, France
来源：
IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 11期
关键词：
MOSFET; P-n junctions; Current measurement; Transistors; Sociology; Temperature measurement; Switches; Random telegraph signal (RTS); variable junction leakage (VJL); reverse-biased p-n junction; defect metastability; NOISE;
D O I：
10.1109/LED.2021.3112296
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents an experimental study of the junction leakage RTS (JL-RTS) in a large set of MOSFET p-n junctions. Arrays of MOSFETs are used to statistically study the effects of the temperature, the electric field, and the source/drain design. The results, supported by ab initio molecular dynamic simulations, advocate for the adoption of the structural fluctuation model over the state charge fluctuation model to describe the defects at the origin of the phenomena.
引用
收藏
页码：1650 / 1653
页数：4
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