Optical and electrical properties of silicon nanocrystals formed by CW laser irradiation of amorphous silicon oxides

被引:13
|
作者
Rossi, MC
Salvatori, S
Burchielli, M
Conte, G
机构
[1] Univ Roma Tre, Dip Ingn Elettron, I-00146 Rome, Italy
[2] INFM, I-00146 Rome, Italy
关键词
amorphous silicon oxide; silicon nanocrystal; laser treatment; Raman scattering;
D O I
10.1016/S0040-6090(00)01599-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Optical and electrical properties of silicon nanocrystals formed by CW laser-treated hydrogenated amorphous silicon-oxygen alloys have been investigated as a function of the irradiation time, for different laser power densities and alloy compositions. Raman scattering measurements indicate that laser irradiation yields a mixed phase structure consisting of silicon nanocrystals (Si-nc) embedded in an oxygen-rich amorphous matrix. It is shown that both photoluminescence (PL) and electrical characteristics clearly reflect this phase separation, resulting in a wavelength-dependent PL excitation and spectral features. Largely different conduction paths related to carrier transport within Si-nc and intergrain oxide are also detected. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:267 / 270
页数:4
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