Effluent stream monitoring of an Al2O3 atomic layer deposition process using optical emission spectroscopy

被引:0
|
作者
Loo, JP [1 ]
机构
[1] Samsung Austin Semicond, Austin, TX 78754 USA
关键词
effluent stream monitoring; optical emission spectroscopy; atomic layer deposition; Al2O3; process wavelength determination; process fault detection;
D O I
暂无
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The formation of Al2O3 by Atomic Layer Deposition poses new challenges to process control. Traditional process metrics have proven not to be the most reliable indicators of process performance and in some cases not responsive to process excursions. As with any batch reaction, by-products and excess reactants are natural consequences. Process quality and performance can be gauged by monitoring these "reaction leftovers" downstream of the processing chamber. This paper will describe the use of Optical Emission Spectroscopy to trend and monitor process specific, effluent stream constituents. Where traditional methodologies fail to detect process excursions, monitoring of effluent stream wavelengths has proven to be a valuable process control tool.
引用
收藏
页码:187 / 190
页数:4
相关论文
共 50 条
  • [1] Atomic layer deposition of Al2O3 process emissions
    Ma, Lulu
    Pan, Dongqing
    Xie, Yuanyuan
    Yuan, Chris
    [J]. RSC ADVANCES, 2015, 5 (17) : 12824 - 12829
  • [2] Analysis of Optical Plasma Monitoring in Plasma-Enhanced Atomic Layer Deposition Process of Al2O3
    Arshad, Muhammad Zeeshan
    Tak, HyunWoo
    Kim, Hyun Gi
    Hong, Sang Jeen
    [J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2019, 19 (03) : 1657 - 1665
  • [3] Effect of process pressure on atomic layer deposition of Al2O3
    Li, Ming-Yen
    Chang, Yung-Yuan
    Wu, Hsiao-Che
    Huang, Cheng-Sung
    Chen, Jen-Chung
    Lue, Jen-Lang
    Chang, Shieh-Ming
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (11) : H967 - H972
  • [4] Smoothing surface roughness using Al2O3 atomic layer deposition
    Myers, Tyler J.
    Throckmorton, James A.
    Borrelli, Rebecca A.
    O'Sullivan, Malcolm
    Hatwar, Tukaram
    George, Steven M.
    [J]. APPLIED SURFACE SCIENCE, 2021, 569
  • [5] Optical properties of Al2O3 thin films grown by atomic layer deposition
    Kumar, Pradeep
    Wiedmann, Monika K.
    Winter, Charles H.
    Avrutsky, Ivan
    [J]. APPLIED OPTICS, 2009, 48 (28) : 5407 - 5412
  • [6] Atomic layer deposition of alumina on γ-Al2O3 nanofibres
    Jogiaas, Taivo
    Arroval, Tonis
    Kollo, Lauri
    Kozlova, Jekaterina
    Kaeaembre, Tanel
    Maendar, Hugo
    Tamm, Aile
    Hussainova, Irina
    Kukli, Kaupo
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 211 (02): : 403 - 408
  • [7] Secondary electron emission characteristics of Al2O3 coatings prepared by atomic layer deposition
    Guo, Junjiang
    Wang, Dan
    Xu, Yantao
    Zhu, Xiangping
    Wen, Kaile
    Miao, Guanghui
    Cao, Weiwei
    Si, JinHai
    Lu, Min
    Guo, Haitao
    [J]. AIP ADVANCES, 2019, 9 (09)
  • [8] Secondary electron emission of Al2O3 and MgO nanofilms fabricated by atomic layer deposition
    Zhu, Xiangping
    Wang, Dan
    Wang, Hui
    Zhou, Rundong
    Li, Xiangxin
    Hong, Yunfan
    Jin, Chuan
    Wei, Yonglin
    Luo, Chaopeng
    Zhao, Wei
    [J]. CHINESE SCIENCE BULLETIN-CHINESE, 2022, 67 (23): : 2811 - 2820
  • [9] Effects of Al Precursors on Deposition Selectivity of Atomic Layer Deposition of Al2O3 Using Ethanethiol Inhibitor
    Kim, Hyun Gu
    Kim, Miso
    Gu, Bonwook
    Khan, Mohammad Rizwan
    Ko, Byeong Guk
    Yasmeen, Sumaira
    Kim, Chang Su
    Kwon, Se-Hun
    Kim, Jiyong
    Kwon, Junhyuck
    Jin, Kwangseon
    Cho, Byungchul
    Chun, J-S
    Shong, Bonggeun
    Lee, Han-Bo-Ram
    [J]. CHEMISTRY OF MATERIALS, 2020, 32 (20) : 8921 - 8929
  • [10] Embedding Quantum Dot Monolayers in Al2O3 Using Atomic Layer Deposition
    Lambert, Karel
    Dendooven, Jolien
    Detavernier, Christophe
    Hens, Zeger
    [J]. CHEMISTRY OF MATERIALS, 2011, 23 (02) : 126 - +