Dynamic evolution of the resistive wall mode with finite wall thickness
被引:2
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作者:
Chen, L. X.
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Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R China
Chen, L. X.
[1
]
Ma, Z. W.
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Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R China
Zhejiang Univ, Inst Fus Theory & Simulat, Hangzhou 310027, Zhejiang, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R China
Ma, Z. W.
[1
,2
]
机构:
[1] Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R China
[2] Zhejiang Univ, Inst Fus Theory & Simulat, Hangzhou 310027, Zhejiang, Peoples R China
The effects of wall thickness on the resistive wall mode (RWM) are studied in a slab geometry with and without plasma flow. The wall thickness can have a large effect on both the linear growth rate and the nonlinear saturation level of the RWM for a low flow velocity. The effect of the wall thickness on the RWM becomes much weaker for a high flow velocity. We found that there is an optimum wall thickness that suppresses the linear growth rate. The plasma flow can also help to control the growth of the RWM. The optimum wall thickness is about delta similar to 0.04-0.07, and decreases with increasing plasma flow velocity, but is almost independent of the wall location. The effect of the plasma flow on the saturation level is much weaker than that of the wall thickness because the duration of the linear growth phase increases with increasing flow velocity. Finally, we find that the RWM is completely stabilized in the regime with a large wall thickness.
机构:
Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R China
Chen, Longxi
Ma, Zhiwei
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机构:
Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R China
Zhejiang Univ, Inst Fus Theory & Simulat, Hangzhou 310027, Zhejiang, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R China
机构:
Dalian Univ Technol, Sch Phys, Minist Educ, Key Lab Mat Modificat Beams, Dalian 116024, Peoples R ChinaDalian Univ Technol, Sch Phys, Minist Educ, Key Lab Mat Modificat Beams, Dalian 116024, Peoples R China
Yang, S. X.
Liu, Y. Q.
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Gen Atom, POB 85608, San Diego, CA 92186 USA
Southwestern Inst Phys, POB 432, Chengdu 610041, Sichuan, Peoples R ChinaDalian Univ Technol, Sch Phys, Minist Educ, Key Lab Mat Modificat Beams, Dalian 116024, Peoples R China
Liu, Y. Q.
Hao, G. Z.
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Southwestern Inst Phys, POB 432, Chengdu 610041, Sichuan, Peoples R China
Univ Calif Irvine, Irvine, CA 92697 USADalian Univ Technol, Sch Phys, Minist Educ, Key Lab Mat Modificat Beams, Dalian 116024, Peoples R China
Hao, G. Z.
Wang, Z. X.
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Dalian Univ Technol, Sch Phys, Minist Educ, Key Lab Mat Modificat Beams, Dalian 116024, Peoples R ChinaDalian Univ Technol, Sch Phys, Minist Educ, Key Lab Mat Modificat Beams, Dalian 116024, Peoples R China
Wang, Z. X.
He, Y. L.
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Dalian Univ Technol, Sch Phys, Minist Educ, Key Lab Mat Modificat Beams, Dalian 116024, Peoples R ChinaDalian Univ Technol, Sch Phys, Minist Educ, Key Lab Mat Modificat Beams, Dalian 116024, Peoples R China
He, Y. L.
He, H. D.
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机构:
Southwestern Inst Phys, POB 432, Chengdu 610041, Sichuan, Peoples R ChinaDalian Univ Technol, Sch Phys, Minist Educ, Key Lab Mat Modificat Beams, Dalian 116024, Peoples R China
He, H. D.
Wang, A. K.
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Southwestern Inst Phys, POB 432, Chengdu 610041, Sichuan, Peoples R ChinaDalian Univ Technol, Sch Phys, Minist Educ, Key Lab Mat Modificat Beams, Dalian 116024, Peoples R China
Wang, A. K.
Xu, M.
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Southwestern Inst Phys, POB 432, Chengdu 610041, Sichuan, Peoples R ChinaDalian Univ Technol, Sch Phys, Minist Educ, Key Lab Mat Modificat Beams, Dalian 116024, Peoples R China