A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects

被引：2
|
作者：
Xu Xiao-Bo [1 ]
Xu Kai-Xuan [1 ]
Zhang He-Ming [1 ]
Qin Shan-Shan [1 ]
机构：
[1] Xidian Univ, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Sch Microelect, Xian 710071, Peoples R China
来源：
CHINESE PHYSICS B | 2011年 / 20卷 / 09期
关键词：
saturation effect; heterojunction bipolar transistor; SiGe; silicon-on-insulator; FILM SOI;
D O I：
10.1088/1674-1056/20/9/098501
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this paper, we describe the saturation effect of a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) fabricated on a thin silicon-on-insulator (SOI) with a step-by-step derivation of the model formulation. The collector injection width, the internal base-collector bias, and the hole density at the base-collector junction interface are analysed by considering the unique features of the internal and the external parts of the collector, as they are different from those of a bulk counterpart.
引用
收藏
页数：5
相关论文
共 50 条
  • [1] A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects
    徐小波
    徐凯选
    张鹤鸣
    秦珊珊
    [J]. Chinese Physics B, 2011, 20 (09) : 453 - 457
  • [2] Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator
    Xu Xiao-Bo
    Zhang He-Ming
    Hu Hui-Yong
    Li Yu-Chen
    Qu Jiang-Tao
    [J]. CHINESE PHYSICS B, 2011, 20 (10)
  • [3] Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator
    徐小波
    张鹤鸣
    胡辉勇
    李妤晨
    屈江涛
    [J]. Chinese Physics B, 2011, 20 (10) : 480 - 485
  • [4] Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator
    Xu Xiao-Bo
    Zhang He-Ming
    Hu Hui-Yong
    Qu Jiang-Tao
    [J]. CHINESE PHYSICS B, 2011, 20 (05)
  • [5] Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator
    徐小波
    张鹤鸣
    胡辉勇
    屈江涛
    [J]. Chinese Physics B, 2011, 20 (05) : 454 - 458
  • [6] Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors
    徐小波
    张鹤鸣
    胡辉勇
    马建立
    [J]. Chinese Physics B, 2011, 20 (05) : 448 - 453
  • [7] Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors
    Xu Xiao-Bo
    Zhang He-Ming
    Hu Hui-Yong
    Ma Jian-Li
    [J]. CHINESE PHYSICS B, 2011, 20 (05)
  • [8] An Analytical Avalanche Multiplication Model for Partially Depleted Silicon-on-Insulator SiGe Heterojunction Bipolar Transistors
    Xu Xiao-Bo
    Zhang He-Ming
    [J]. CHINESE PHYSICS LETTERS, 2011, 28 (07)
  • [9] Electrical behavior research of silicon-on-insulator SiGe heterojunction bipolar transistor
    Zhang Bin
    Yang Yin-Tang
    Li Yue-Jin
    Xu Xiao-Bo
    [J]. ACTA PHYSICA SINICA, 2012, 61 (23)
  • [10] SILICON-ON-INSULATOR BIPOLAR-TRANSISTORS
    RODDER, M
    ANTONIADIS, DA
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1604 - 1605
12345