Optical Properties Change in Te Diffused As50Se50 Chalcogenide Thin Film

被引：0
|
作者：
Naik, Ramakanta [1 ]
Behera, M. [1 ]
Panda, R. [1 ]
Mishra, N. C. [1 ]
机构：
[1] Utkal Univ, Dept Phys, Bhubaneswar 751004, Odisha, India
来源：
DAE SOLID STATE PHYSICS SYMPOSIUM 2015 | 2016年 / 1731卷
关键词：
Chalcogenide; Thin film; Optical properties; FTIR;
D O I：
10.1063/1.4947881
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In the present report, we present the effect of Te diffusion into As50Se50 thin film which changes the optical properties. The Te/As50Se50 film was irradiated by a laser beam of 532 nm to study the diffusion mechanism due to photo induced effect. The As50Se50, Te/As50Se50 films show a completely amorphous nature from X-ray diffraction study. A non direct transition was found for these films on the basis of optical transmission data carried out by Fourier Transform infrared Spectroscopy. The optical bandgap is found to be decreased with Te deposition and photo darkening phenomena is observed for the diffused film. The change in the optical constants are well supported by the corresponding change in different types of bonds which are being studied by X-ray photoelectron spectroscopy.
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页数：3
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