Effect of temperature and frequency on dielectric and ferroelectric properties of PZT thin films

This work reports the effect of annealing temperature and frequency on dielectric and ferroelectric properties of PZT thin films produced by oxide precursor method. The properties reported include dielectric constant and dissipation factor and hysteresis loops as a function of annealing temperature and frequency. Dielectric constant and dissipation factor were measured to be, respectively, 517 and 0.04, at 100 kHz frequency, for film crystallized at 700 degreesC for 1 h. Ferroelectricity was confirmed by P-E hysteresis loops. Films annealed at 700 degreesC for 1 h presented higher remanent polarization compared with films annealed at 600 degreesC for I h over frequency range from 300 Hz to 300 kHz. However, coercive field increases for films annealed at 700 degreesC and decreases for films annealed at 6000C for 1 h over the same frequency range. (C) 2000 Elsevier Science B.V. All rights reserved.