Negative-resistance device using organic-dye-doped polymer film

In order to develop a new negative-resistance device, a single-layer device of organic-dye-doped insulating polymer was fabricated by dipping. The current-voltage characteristics at room temperature showed remarkable negative resistance. The ratio of peak current to valley current was 23 or higher and the difference between peak and valley voltages was 2 V. The negative resistance did not depend much on the combination of insulating polymer matrix and dye dopant or on temperature. This suggests that the negative resistance is caused by tunneling transport of holes or electrons. Two possible models are considered for the origin of the negative resistance. One is based on the polarization formed by holes or electrons trapped in the dye molecule. The other is based on the tunneling at the interface between electrode and dye molecules. (C) 1998 Elsevier Science S.A. All rights reserved.