Polarization Conversion Based on Mie-Type Electromagnetically Induced Transparency (EIT) Effect in All-Dielectric Metasurface

被引:32
|
作者
Zhu, Lei [1 ,2 ]
Dong, Liang [1 ,3 ]
Guo, Jing [4 ]
Meng, Fan-Yi [5 ]
He, Xun Jun [6 ]
Zhao, Chun Hui [2 ]
Wu, Qun [5 ]
机构
[1] Qiqihar Univ, Commun & Elect Engn Inst, Qiqihar 161006, Peoples R China
[2] Harbin Engn Univ, Coll Informat & Commun Engn, Harbin 150001, Heilongjiang, Peoples R China
[3] Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing 100876, Peoples R China
[4] North Univ China, Minist Educ, Sci & Technol Elect Test & Measurement Lab, Taiyuan 030051, Shanxi, Peoples R China
[5] Harbin Inst Technol, Elect & Informat Inst, Harbin 150001, Heilongjiang, Peoples R China
[6] Harbin Univ Sci & Technol, Dept Elect Sci & Technol, Harbin 150080, Heilongjiang, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
Polarization conversion; Electromagnetically induced transparent (EIT) metasurface; Mie resonance; BROAD-BAND; CHIRAL METAMATERIAL; FANO RESONANCES; PHASE; MANIPULATION; REFLECTION; ANALOG;
D O I
10.1007/s11468-018-0712-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this paper, we propose an all-dielectric metasurface to realize the linear-to-circular polarization conversion of resonantly transmitted waves. This metasurface is composed of two intersection bars and four circle bricks. It has numerically demonstrated that the electromagnetic (EM) couplings between dielectric bar and bricks lead to the famous electromagnetically induced transparent (EIT) effect. Subsequently, based on Mie-type EIT resonances for two incident polarizations, the linear-to-circular polarization conversion occur at about 0.47 THz. More importantly, the thickness of our device is subwavelength and it is very transparency for EM waves. We also investigate the dependences of device performance on incident angles of EM waves and structure thicknesses. Device good performance is almost kept at about 0.47 THz for slightly incident angle tilts (theta <= 30 degrees) and tiny changes of substrate thickness. But device performance is strongly dependent on dielectric thickness. These results are very important for its integration to the existing terahertz devices, or its application to future polarization controls.
引用
收藏
页码:1971 / 1976
页数:6
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