Angular rotation ion implantation technology in SiC for 4H-SiC junction barrier Schottky rectifiers

被引：0

作者：

Jiang, Chunyan ^{[1
,2
]}

Wu, Hao ^{[1
,2
]}

Tian, Liang ^{[1
,2
]}

Li, Jialin ^{[1
,2
]}

Liu, Rui ^{[1
,2
]}

Zhu, Tao ^{[1
,2
]}

Li, Ling ^{[1
,2
]}

Zhang, Hongdan ^{[1
,2
]}

Jiao, Qianqian ^{[1
,2
]}

Wu, Bin ^{[3
]}

Qi, Xiang ^{[3
]}

Wu, Junmin ^{[1
,2
]}

Pan, Yan ^{[1
,2
]}

机构：

[1] State Key Lab Adv Power Transmiss Technol, Beijing, Peoples R China

[2] Global Energy Interconnect Res Inst Co Ltd, Beijing, Peoples R China

[3] State Grid Taian Power Supply Co, Tai An, Shandong, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2020年 / 531卷

关键词：

Ion implantation; Angular rotation; SiC; Junction Barrier Schottky diode; DESIGN;

D O I：

10.1016/j.jcrysgro.2019.125354

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

SiC is widely used for making high level power electronic devices due to its excellent properties. SiC Junction Barrier Schottky (JBS) diodes have a low reverse leakage current and could offer fast switching and the Schottky-like on-state characteristics. High temperature ion implantation has been an essential process for the mainly doping formation SiC power electronic devices. In this work, the angular rotation ion implantation technology in SiC JBS has been investigated. The distribution of the injected elements has also been simulated, and the calculated results fitted well with the experimental results. With this angular rotation technology the power loss of the SiC JBS diodes have been reduced, effectively. And the rate of finished product was turned out to be as high as 90%. This method can greatly reduce the process flow, reduce the damage to the wafer and save production cost, which has great significance in quantity production.

引用

页数：4

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