Experimental observation of higher-order anapoles in individual silicon disks under in-plane illumination

被引:2
|
作者
Diaz-Escobar, Evelyn [1 ]
Barreda, Angela I. [1 ,2 ]
Griol, Amadeu [1 ]
Martinez, Alejandro [1 ]
机构
[1] Univ Politecn Valencia, Nanophoton Technol Ctr, Camino Vera S-N, Valencia 46022, Spain
[2] Friedrich Schiller Univ Jena, Inst Solid State Phys, Max Wien Pl 1, D-07743 Jena, Germany
关键词
ENHANCEMENT;
D O I
10.1063/5.0108438
中图分类号
O59 [应用物理学];
学科分类号
摘要
Anapole states-characterized by a strong suppression of far-field scattering-naturally arise in high-index nanoparticles as a result of the interference between certain multipolar moments. Recently, the first-order electric anapole, resulting from the interference between the electric and toroidal dipoles, was characterized under in-plane illumination as required in on-chip photonics. Here, we go a step further and report on the observation of higher-order (magnetic and second-order electric) anapole states in individual silicon disks under in-plane illumination. To do so, we increase the disk dimensions (radius and thickness) so that such anapoles occur at telecom wavelengths. Experiments show dips in the far-field scattering perpendicular to the disk plane at the expected wavelengths and the selected polarizations, which we interpret as a signature of high-order anapoles. Some differences between normal and in-plane excitation are discussed, in particular, the non-cancelation of the sum of the Cartesian electric and toroidal moments for in-plane incidence. Our results pave the way toward the use of different anapole states in photonic integrated circuits either on silicon or other high-index dielectric materials. Published under an exclusive license by AIP Publishing.
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页数:7
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