A new compact model for monolithic transformers in silicon-based RFICs

被引：23
|
作者：
Mayevskiy, Y [1 ]
Watson, A
Francis, P
Hwang, K
Weisshaar, A
机构：
[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA
[2] Natl Semicond Corp, Santa Clara, CA 95052 USA
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2005年 / 15卷 / 06期
关键词：
eddy currents; equivalent-circuit model; monolithic transformers; mutual resistance; radio frequency integrated circuit (RFIC); silicon substrate;
D O I：
10.1109/LMWC.2005.850558
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new compact model for monolithic transformers on silicon substrates is presented. The new lumped-element equivalent circuit model employs transformer loops to represent skin and proximity effects including eddy current loss in the windings of the transformer. In addition to the self-resistances and self-inductances of the windings, the effects of the frequency-dependent mutual resistance and mutual inductance are included in the model. The new compact model has been applied to a stacked transformer on a 10-Omega center dot cm CMOS substrate. The extracted circuit model shows very good agreement with data obtained by full-wave electromagnetic simulation and measurement over the frequency range of 0.1-10 GHz.
引用
收藏
页码：419 / 421
页数：3
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