Influence of Temperature on Surface Morphology and Photoelectric Performance of CuAlO2 Thin Films

CuAlO2 thin films were prepared on sapphire substrate by sol-gel method. The influences of annealing temperature, heating rates and annealing time on composition, morphology and photoelectric performance of film were investigated. The results of X-ray power diffraction, scanning electron microscope, transmissivity, and hall parameter tests showed that the CuAlO2 phase was relatively pure when the annealing temperature was above 950 degrees C. The higher the temperature, the higher the peak position. Under the optimal conditions, CuAlO2 film exhibited the best transmittance (90%) and the highest conductivity (1.23 S cm(-1)). On this basis, increasing the heating rate and annealing time was in favor of enlarging the size of the particles and the film grain growth direction tended to be unified.